The addition of impurities to a semiconductor for the purpose of modifying its electrical conductivity; in this study it is hoped that doping with various elements (i.e. Ni) will increase the magnetoresistance.
The introduction of an element that alters the conductivity of a semiconductor. Adding boron to silicon will create a P-type (more positive) material, while adding phosphorus or arsenic to silicon will create N-type (more negative) material.
The substitution of atoms in a semiconductor by species of a different valence to the host species, such that extra charge carriers, electrons or positive holes, are introduced and the conductivity of the semiconductor is increased.
The lacing of an intrinsic semiconductor material with another type of atom to change the propulation of either positive or negative charge carriers, see also N-TYPE and P-TYPE
Controlled addition of small quantities of an impurity to a pure substance in order to change its characteristics, e.g. increase the refractive index (see refractive index) of the fiber core. Electromagnetic compatibility EMC Electromagnetic interference immunity and interference emission of a cable/system.
To treat with an impurity added in minute amounts to a pure substance to alter its properties.
The addition of an ionic impurity to a semiconductor to alter its conductivity in desired well-defined area and to specified depth.
The process of introducing dopants into silicon during the manufacture of semiconductors.
The intentional addition of a foreign substance to a pure substance in order to alter the behavior or properties of the pure substance.
The addition of impurities to another substance, usually solid, in a controlled manner that produces desired properties. Silicon doping with small amounts of other semi metallic elements increases the number of electrical carriers.
The addition to a semiconductor material of very small, but controlled amount, of another element.
The addition of impurities to a semiconductor to control the electrical resistivity.
The process of the donation of an electron or hole to the conduction process by a dopant.
Deliberately adding a very small amount of foreign substance to an otherwise very pure semiconductor crystal. These added impurities give the semiconductor an excess of conducting electrons or an excess of conducting holes (the absence of conducting electrons) which is crucial for making a working transistor.
The introduction of an impurity into a semiconductor to modify its electrical properties.
In electronics, the addition of impurities to a semiconductor to achieve a desired characteristic, often altering its conductivity dramatically. Also known as semiconductor doping.
Adding a controlled amount of impurities to a material in order to modify some intrinsic characteristic, e.g., resistivity/conductivity, melting point.
The intentional alloying of semiconducting materials with controlled concentrations of donor or acceptor impurities.
The deliberate introduction of specific impurity atoms into the silicon crystal lattice to change its electrical properties.
Process of introducing impurity atoms into a semiconductor to modify its electrical properties.
The process of adding impurity atoms to intrinsic (pure) silicon or germanium to improve the conductivity of the semiconductor material.
the controlled addition of impurities to a semiconductor
The process of imparting impurities to an intrinsic semiconductor material in order to control its conduction characteristics. Adding impurity elements to intrinsic semiconductors to improve their conductivity.
the process of introducing a dopant. Doping is most commonly accomplished by ion implantation although historically doping was accomplished by pre-deposition.
The process of adding impurities to semiconductor crystals to increase the number of free charges that can be moved by an external, applied voltage. Doping produces N-type or P-type material.
A wafer fabrication process in which exposed areas of silicon are bombarded with chemical impurities to alter the way the silicon conducts electricity in those areas.
Adding an impurity to a semiconductor to produce a desired charge.
The addition of dopants to a semiconductor.
In semiconductor production, doping refers to the process of intentionally introducing impurities into an extremely pure (also referred to as intrinsic) semiconductor in order to change its electrical properties. The impurities are dependent upon the type of semiconductor. Lightly and moderately doped semiconductor is referred to as extrinsic.