A heavily doped p-n diode in which electron tunneling from the conduction band in the n-type material to the valence band in the p-type region produces a region of negative resistance. Tunnel diodes may be used as oscillators, amplifiers or detectors (M/A-COM does not manufacture tunnel diodes).
A heavily doped semiconductor device that has high gain and fast switching capabilities. See NEGATIVE-RESISTANCE ELEMENT.
A heavily doped diode that is used in high-frequency communications systems.
Heavily doped junction diode that has negative resistance in the forward direction of its operating range.
A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave region GHz, by utilizing quantum mechanical effects.