A gas-phase chemical deposition technique involving plasma electrons that make the process operable at low temperatures. Conventional CVD processes require higher substrate temperatures in order to break existing chemical bonds and release the desired species from the gas.
Plasma Enhanced Chemical Vapor Deposition. This machine can deposit thin films on silicon, GaAs, and other substrates in the Nanolab
Plasma enhanced CVD (see PaCVD)
Plasma Enhanced Chemical Vapor Deposition is a process where plasma is used to lower the temperature required to deposit film onto a wafer.
See plasma enhanced chemical vapor deposition.
Plasma enhanced chemical vapor deposition. Chemical vapor deposition in which a plasma is created from the reactant gases. The ions in the plasma are in an excited state and so will easily react with the silicon wafer, without the need for elevated temperatures as in conventional (thermal) CVD.
Plasma Enhanced Chemical Vapor Deposition - a where a plasma is used to accelerate a CVD reaction.