This is a form of memory that stores information magnetically instead of electrically like DRAM. IBM has been working on developing MRAM since 1974, and when it is available as early as 2003, it should be faster than DRAM and be able to hold as much information, but it will not require the electrical refresh of DRAM. It will hold onto data like flash memory.
Magnetic Random-Access Memory. Unlike current RAM, MRAM does not require constant electricity to hold its data; rather, it stores information in magnetic fields of irregularly shaped cobalt or nickel nanorings.
Stands for magnetic random access memory. Rather than relying on electrons, which can be lost, like dynamic random access memory (DRAM), MRAM stores data in the spin of electrons. It can store as much memory as DRAM and it can access it instantly, which means no waiting for computers to boot up.