A device that does not require as much power as bipolar devices because of its insulation. The term can be applied either to transistors in an IC or to discrete power devices. MOSFETs are easier to manufacture than bipolar devices and are a building block in the fabrication of CMOS chips.
Metal Oxide on Silicon Field Effect Transistor. Transistors of this nature, which can be made on a range of processes using increasing cell densities, are capable of very efficient switching in certain applications.
Abbreviation for "metal oxide field effect transistor" also known as an "insulated gate field effect transistor). A field effect transistor in which the insulating layer between the gate electrode and the channel is a metal oxide layer.
Metal Oxide Semiconductor Field Effect Transistors. Used in most modern, quality car audio amplifiers in the power supply (and sometimes in the output stage). MOSFET's run cooler than normal bipolar transistors, and have a faster switching speed.
A form of field-effect transistor controlled by voltage rather than current, like a bipolar transistor. MOSFETs have a significantly higher switching speed than bipolar transistors. They generate almost no loss (little heat generation), which lends the power supply fast response, excellent linearity, and high efficiency.
A semiconductor device that contains diffused source and drain regions on either side of a P- or N-channel area. Also contains a gate insulated from the channel area by silicon-oxide. Operates in either the depletion or the enhancement mode.