Refers to the order in which the semiconductor is doped in a MOS device. That is, which structures are constructed as N-type versus P-type material.
N-Channel Metal Oxide Semiconductor. A MOS transistor whose source and drain are N type diffusions in a P substrate. Applying a voltage of the proper polarity between gate and source produces a conducting channel of N material between source and drain.
N-channel metal oxide semi conductor. A chip fabrication technology requiring moderate performance and moderate power.
Also called "N-Channel MOS" (metal oxide semiconductor). A type of MOSFET in which electrons are the dominant charge carrier in the semiconductor channel. The channel is N-type. NMOS devices run at least twice as fast as PMOS (P-Channel MOS) devices--the oldest type of MOS circuit-- because the mobility of electrons is higher than that of holes. Compare PMOS.
An n-channel MOS transistor; in an NMOS device the channel is negative during conduction.
Negative-Channel Metal-Oxide Semiconductor: A type of integrated circuit using n-doped semiconductors negatively charged) so that transistors function by the movement of electrons. In contrast, PMOS (Positive-Channel MOS) works by moving electron vacancies (holes). NMOS is faster than PMOS, but also more expensive to produce.
N-Channel Metal Oxide Semiconductor. A transistor technology where the primary current carriers are negatively charged electrons.
N-channel metal-oxide semiconductor. A MOS IC using n-type material for the channels.
N-channel MOS, a MOS circuit in which electrons are the charge carriers. This system is faster than PMOS.
Integrated-circuit technology that uses N-channel MOSFETs as the principal circuit element.
