a foreign substance added to a material to alter its properties; -- a process used. e.g., in making semiconductors from pure silicon in the manufacture of semiconductor chips and integrated circuits.
An element incorporated in trace amounts into single crystal silicon or epitaxial layers to establish their conductivity type and resistivity and create n-type or p-type silicon. Dopants are classifed as either acceptors or donors.
A small and controlled amount of impurity, such as arsenic in silicon, purposely added to a pure semiconductor to change its electrical properties.
foreign atom introduced into the lattice of a semiconductor in order to modify its electrical properties and resulting in a discrete allowable energy level in the bandgap and close to the valence band or to the conduction band. This atom then gives an electron or a mobile hole to either of the allowed bands thus increasing the electrical conductivity of the material
an impurity that is added in small amounts to a pure substance to change its properties
element introduced intentionaly into a semiconductor to establish either p-type or n-type conductivity; Common dopants in silicon are: Boron (p-type) and phosphorous, arsenic, and antimony (n-type). learn more.
Tiny amounts of impurities can change the electronic properties of the silicon, affecting greatly how it conducts electric current. Selected impurities called dopants are deliberately introduced into the silicon to create devices such as transistors. Typical dopant concentrations in silicon range from one part in a thousand to one part in ten million. Phosphorus, arsenic and boron are the most common dopants used for silicon. Phosphorus and arsenic make the silicon n-type, which means that the current carriers are negatively charged electrons. Boron makes the silicon p-type because the current carriers are positively charged holes. Dopants are normally introduced into the silicon by ion implantation.
An element intentionally introduced during a process to establish either p- type (acceptors) or n- type (donors) conductivity to alter the conductivity of a semiconductor. Common dopants in the manufacture of semiconductors include: p-type, boron (B); n-type phosphorous (P), arsenic (As), antimony (Sb).
An impurity added to a pure substance to alter the behavior or properties of the pure substance. Dopants in semiconductors are either charge carrier donors or acceptors, and make the semiconductor either n-type (surplus electrons), or p-type (shortage of electrons).
An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
An impurity added to an optical medium to change its optical properties. Note: Dopants are used in optical fibers to control the refractive index profile and other refractive properties of the fiber. Learn more about Dopant...
An impurity element used to add positive or negative charge to a semiconductor.
In relation to fibre optics, a material such as germaniam or boron oxide that is added to silica to change the refractive index.
A material, usually germania or boron oxide, added to silica to change its index of refraction.
an Impurity added to a semiconductor to change the number of holes and electrons relative to each other.
An impurity added to an optical medium to change its optical properties. EDFAs use erbium as a dopant for optical fiber.
A chemical element (impurity) added in small amounts to an otherwise pure semiconductor material to modify the electrical properties of the material. An n-dopant introduces more electrons. A p-dopant creates electron vacancies (holes).
A dopant, also called doping agent and dope, is an impurity element added to a semiconductor lattice in low concentrations in order to alter the optical/electrical properties of the semiconductor.