A means for adding dopants to a semiconductor material. Charged atoms (ions) are accelerated in an electric field into the semiconductor material. It is especially useful for thin doped areas. This process is much more precise than the diffusion method of doping.
(sc) introduction of selected impurities (dopants) by means of high-voltage ion bombardment to achieve desired electronic properties in defined areas.
A process in which beams of ions are directed at a semiconductor to alter its type and conductivity in certain regions.