A means for adding dopants to a semiconductor material. Charged atoms (ions) are accelerated in an electric field into the semiconductor material. It is especially useful for thin doped areas. This process is much more precise than the diffusion method of doping.
(sc) introduction of selected impurities (dopants) by means of high-voltage ion bombardment to achieve desired electronic properties in defined areas.
A process in which beams of ions are directed at a semiconductor to alter its type and conductivity in certain regions.
The ion beam implanter is used to alter the near surface properties of semiconductor materials.
Introducing impurities into the near-surface regions of solids by directing a beam of ions at the solid.
The process by which dopants are introduced in exact quantities into silicon. A stream of charged particles (called ions) of phosphorus, arsenic, or boron is created and then directed at a silicon wafer at a precisely controlled velocity (energy). In this way both the concentration and depth of the dopant can be controlled. See low k dielectric and high k dielectric.
The introduction of free ions into a material by accelerating them, under the influence of a large electromagnetic field, through space into a target material such as a semiconductor wafer. Ion implantation is used in the semiconductor industry to add dopants to wafers at low temperature, rather than to use high temperature diffusion or epitaxial deposition techniques.
A process technology in which ions of dopant chemicals (boron, arsenic, etc.) are accelerated in intense electrical fields to penetrate the surface of a wafer, thus changing the electrical characteristics of the material.
A semiconductor manufacturing process in which the silicon is bombarded with high-voltage ions in order to implant them in specific locations and provide the appropriate electronic characteristics. A more precise alternative to diffusion.
a technique where Ions are accelerated to a high Energy and speed an injected into a Semiconductor. The dominant techniques for introducing Dopants into a Semiconductor. See also Ion Implanter.
a process whereby impurity ions are accelerated to a specific energy level and impinged upon the silicon wafer. The energy level determines the depth to which the impurity ions penetrate the silicon. Impingement time determines the impurity concentration. Thus, it is possible to independently control these parameters, and buried piezoresistors are easily produces. Ion implantation is increasingly used throughout the semiconductor industry to provide a variety of products with improved performance over those produced by diffusion.
The acceleration of ions to high velocity to embed them into a surface.
Ion implantation is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research. The ions introduce both a chemical change in the target, in that they can be a different element than the target, and a structural change, in that the crystal structure of the target can be damaged or even destroyed.